| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten channel lengths and to improve switching characteristics by providing scanning wirings with slits in correspondence to the side of channels and executing rear surface exposure by utilizing these slits. SOLUTION: The scanning lines are provided thereon with TFTs in correspondence to the intersected parts with signal wirings 12. The sources 10 and drains 11 of the TFTs are parted and arranged across protective films 6 consisting of insulators. The channel regions of the TFTs are formed between these electrodes. The slits 7 are formed in the parts of the section wirings right under the drains 11. Namely, the scanning wirings are divided by the slits 7 in the parts where the TFTs are arranged. The parts on the channel side viewed from the slits 7 function as the gates of the TFTs. The slits 7 are completely covered by the drains 11 in order to cut the incident light from the rear surface of the substrate and, therefore, the generation of the off-leak current by the formation of photocarriers is lessened by assuring the regions where the light is not made incident on the semiconductor layers 5 of the TFTs.</p> |
