Deep trench process

摘要

A high yield process for creating uniform deep trenches in a crystalline silicon substrate is disclosed. The process involves immobilizing a crystalline silicon substrate on an electrostatic chuck in a plasma etching apparatus, heating the silicon substrate by raising the cathode temperature to 30 DEG to 80 DEG C., exposing the silicon substrate to a plasma generated from HBr, NF3, and O2; and carrying out a plasma etch with the temperature of the cathode held at 30 DEG to 80 DEG C.