| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel diode which is excellent in light transmission characteristics and can apply a large current. SOLUTION: A tunnel junction layer consists of a P<++> InGaP layer 12 and an N<++> InGaP layer 11. A P<+> A InP layer 82 is formed on the tunnel junction layer. An N<+> InGaP layer 81 is formed under the tunnel junction layer. Outward diffusion of Zn in the P<++> InGaP layer 12 is restrained, and an excellent tunnel layer is obtained. When the tunnel junction layer is used as that of a tunnel type two-junction solar battery, a solar battery excellent in conversion efficiency and spectral sensitivity characteristics can be realized. |
