| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor wherein contact resistance between a semiconductor film and a source drain electrode is small, the leak current of a thin film transistor is reduced, and excellent transistor characteristics are obtained. SOLUTION: The transistor is provided with the following; a source drain electrode 13 formed on a substrate 11, an intermediate film 29 formed on the source drain electrode, a semiconductor film 15 formed on the intermediate film, a gate insulating film 17 formed on the semiconductor film, and a gate electrode 19 formed on the gate insulating film. The intermediate film is formed in the region where the source drain electrode and the semiconductor film overlap with each other. |
