| 摘要 |
PROBLEM TO BE SOLVED: To attain a multilayer wiring structure which has a low dielectric constant of an interlayer insulating film to reduce the cavity between wirings to be manufactured in a small number of steps. SOLUTION: A silicon oxide film 3 is formed on a semiconductor substrate 1 whereon underneath Al wirings 14 are formed and then a low dielectric constant resin film 8 and the first low sensitivity photoresist film 9 are formed on the silicon oxide film 3 to be exposed (a). Next, the second high sensitivity photoresist film 10 is formed to be exposed (b). Next, the first and second photoresist films 9, 10 are simultaneously deposited so as to form a vertical connecting pattern and wiring trench pattern. Next, the photoresist film are removed by dryetching step simultaneously to transfer the patterns of the photoresist films to a resin film 8. Next, the silicon oxide film 3 is selectively etched away to form a vertical connecting hole 3a (c). Finally, a vertical connecting wiring 12 and a trench buried Cu wiring 13 are formed by Cu deposition and Cu grinding removal on the resin film 8. |
