| 摘要 |
FIELD: production of semiconducting materials. SUBSTANCE: invention is dealing with manufacturing polycrystalline silicon bars as starting material for growing silicon monocrystals. Installation has split reactor 1, vertical mount 2, tank 3, lifter 4, component charging system 5, and transfer shuttle 6. Upper part of reactor 7 is rigidly fastened to vertical mount 2, and lower part of reactor 8 is mobile. Lifter 4 is installed on guides 9 of mount 2 and is cohered to lower part of reactor 8 or to tank 3 through a locking means. Upper part of reactor 7 bears current leads 11 with socket attachment fittings. Tank 3 has pockets 13 with bottom dampers 14 positioned according to location of current leads. To lower part of reactor 8, component supply line from component supply unit 5 is led up as well as line for removal of gas and liquid reaction products. Installation is provided with service platform 15. Reactor is charged through lifting tank 3 with mounts installed in pockets 13 by the aid of lifter 4. Operator standing on service platform 15 performs installation of mounts into attachment units 12 on current leads 11. Further, lower part of reactor 8 is carried under reactor with lifter 4, lifted, and butted to upper part of reactor 7. Polycrystalline bars are grown by technique of hydrogen reduction of chlorosilanes. Discharge is effected into pockets 12 of tank 3. EFFECT: improved design. 1 dwg |
