| 摘要 |
FIELD: analytical chemistry and concerns development of the method of determination of sponging impurities (M,C,N,O) in high-purity solid substances. SUBSTANCE: the method consists in surface cleaning, evaporation and ionization of the substance under examination by action of impulse laser radiation, mass spectrum analysis and detection of the basis and impurity with accumulation of analytical information. The surface of the substance under analysis is cleaned by action of impulse laser radiation with a power density on the sample surface within 5×10to 1×10W/sq.cm, and evaporation and ionization are accomplished in 100 to 1000 us by action of another impulse laser radiation with a power density within 5×10to 1×10W/sq.cm; after the mass spectrum analysis an additional analysis of the basis and impurities is performed by action of an electric field with a subsequent spectrum analysis of ions that have passed through the electric field. The offered method makes it possible to determine sponging impurities (H,C,N,O) in metals, semiconductors, dielectrics with a detection range of n×10%, where n=1-10. EFFECT: facilitated procedure. |
