发明名称 |
LCD active matrix substrate manufacturing method |
摘要 |
In making an active matrix liquid crystal display a conductive layer is formed and etched to produce the source 7 and drain 8 regions of a thin film transistor. The source region includes a source pad 7A. A passivating layer 9 is then deposited and etched to form contact holes thereby exposing the source pad 7A the drain 8 and the gate pad. Indium tin oxide is then deposited and etched to form a pixel electrode 6. At the same time ITO pattern 6A is provided on source pad 7A which is part of the data line of the liquid crystal display.
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申请公布号 |
DE19624916(A1) |
申请公布日期 |
1997.02.20 |
申请号 |
DE1996124916 |
申请日期 |
1996.06.21 |
申请人 |
LG ELECTRONICS INC., SEOUL/SOUL, KR |
发明人 |
SHIN, WOO SUP, KUMI, KR |
分类号 |
G02F1/1333;G02F1/1343;G02F1/1345;G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;G09F9/35;G09G3/36;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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