发明名称 LCD active matrix substrate manufacturing method
摘要 In making an active matrix liquid crystal display a conductive layer is formed and etched to produce the source 7 and drain 8 regions of a thin film transistor. The source region includes a source pad 7A. A passivating layer 9 is then deposited and etched to form contact holes thereby exposing the source pad 7A the drain 8 and the gate pad. Indium tin oxide is then deposited and etched to form a pixel electrode 6. At the same time ITO pattern 6A is provided on source pad 7A which is part of the data line of the liquid crystal display.
申请公布号 DE19624916(A1) 申请公布日期 1997.02.20
申请号 DE1996124916 申请日期 1996.06.21
申请人 LG ELECTRONICS INC., SEOUL/SOUL, KR 发明人 SHIN, WOO SUP, KUMI, KR
分类号 G02F1/1333;G02F1/1343;G02F1/1345;G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;G09F9/35;G09G3/36;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/1333
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