| 摘要 |
<p>A parasitic bipolar where minority carriers (AS) produced in an SOI substrate (1) by injecting the carriers (AS) into the source of a MOS transistor formed on the substrate (1). An area having a conductivity which is opposite to that of the source diffused layer (11) of the MOS transistor and a recombination center mechanism is formed in the source diffused layer (11).</p> |
