TRENCHED DMOS TRANSISTOR WITH CHANNEL BLOCK AT CELL TRENCH CORNERS,申请号EP19950921443-传众专利搜索

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发明名称	TRENCHED DMOS TRANSISTOR WITH CHANNEL BLOCK AT CELL TRENCH CORNERS
摘要
申请公布号	EP0712535(A4)	申请公布日期	1997.02.19
申请号	EP19950921443	申请日期	1995.05.31
申请人	SILICONIX INCORPORATED	发明人	HSHIEH, FWU-IUAN;KWAN, SZE-HON;CHANG, MIKE, F.;HO, YUEH-SE;VAN DER LINDE, JAN;OWYANG, KING
分类号	H01L21/76;H01L21/336;H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L29/00;H01L29/76;H01L21/265;H01L21/302	主分类号	H01L21/76
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