发明名称 |
Process for the chemical beam etching of a substrate |
摘要 |
A process for etching a substrate or an epitaxial layer on a substrate, in which two or more substrate elements react with different supply substances to form different volatile cpds., involves (a) simultaneously producing, in an ultra-high vacuum, chemical jets of the respective supply substances which converge towards the substrate or epitaxial layer; and (b) maintaining the substrate or layer at a temp. which causes evaporation of the resulting reaction products. |
申请公布号 |
EP0758691(A1) |
申请公布日期 |
1997.02.19 |
申请号 |
EP19960401728 |
申请日期 |
1996.08.05 |
申请人 |
ALCATEL OPTRONICS |
发明人 |
GOLDSTEIN, LEON;GENTNER, JEAN LOUIS;JARRY, PHILIPPE |
分类号 |
C30B23/08;C23F4/00;C30B23/02;H01L21/203;H01L21/302 |
主分类号 |
C30B23/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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