| 摘要 |
A method of drying a wafer and performing perfect termination with hydrogen at the same time, by which a large number of wafers can be processed, the number of processings is decreased, and no contamination is caused. The method comprises the steps of mixing an inner gas and hydrogen gas to produce a mixed gas; producing hydrogen radicals by radicalizing hydrogen molecules contained in the mixed gas; introducing into a dry chamber a gas mixture containing hydrogen radicals; and drying wafers, cleaned by chemicals, by the gas mixture in the dry chamber and at the same time, terminating dangling bonds with hydrogen. <IMAGE> |
