VOLTAGE BREAKDOWN RESISTANT MONOCRYSTALLINE SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS OF FABRICATING SAME,申请号EP19950918347-传众专利搜索

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发明名称	VOLTAGE BREAKDOWN RESISTANT MONOCRYSTALLINE SILICON CARBIDE SEMICONDUCTOR DEVICES, AND METHODS OF FABRICATING SAME
摘要
申请公布号	EP0758489(A1)	申请公布日期	1997.02.19
申请号	EP19950918347	申请日期	1995.05.02
申请人	NORTH CAROLINA STATE UNIVERSITY	发明人	BALIGA, BANTVAL, JAYANT;ALOK, DEV
分类号	H01L21/04;H01L21/265;H01L21/329;H01L29/06;H01L29/24;H01L29/47;H01L29/861;H01L29/872;(IPC1-7):H01L29/06;H01L21/18	主分类号	H01L21/04
代理机构		代理人
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