| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain such a halftone phase shift mask that formation of a superfine pattern is not required and subpeaks in the intensity of light which give bad influences on the formation of an image during exposure are suppressed, and that has such a light-shielding pattern that the transmittance in the area which is outside the element region and is exposed to multiple exposure is decreased. SOLUTION: The halftone phase shift mask has a halftone phase shift film 102 composed of a single layer or two or more layers on a transparent substrate 101. In the area 107 which is outside the element region on the transparent substrate 101 and is subjected to multiple exposure, the compsn. of the halftone phase shift film 102 is changed by irradiation with electromagnetic waves, particle beams or heat rays or the like, or by masking the area which is not desired to be changed and then exposing the whole area to active atmosphere, so that the transmittance in the this area for exposure light is decreased.</p> |
