发明名称 |
Field implant for semiconductor device |
摘要 |
The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.
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申请公布号 |
US5604370(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19950501230 |
申请日期 |
1995.07.11 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MEHTA, SUNIL;LIN, JONATHAN |
分类号 |
H01L21/762;H01L29/06;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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