| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus wherein an object to be processed is placed on a supporting base and the object is subjected to target processing in a specified vacuum while the processing temperature thereof is controlled by controlling the temperature of the supporting base, and by which the processing temperature thereof can be controlled easily and accurately. SOLUTION: An object S1 to be processed is placed on a supporting base 2, and while its processing temperature is controlled by allowing a coolant to flow from a chiller 7 to a coolant passage 71 in the base 2, etching, etc., using a plasma etching gas is applied to the object S1 in a specified vacuum. In such a vacuum processing apparatus, a charge is accumulated in the object S1 on the base 2 accompaning to the processing of plasma, etc., and a DC voltage with a polarity reverse to that of the charge is applied to the base 2 from a DC power supply 4, so an electrostatic absorbing force is generated. Thanks to the absorbing force, the object S1 is brought into contact with the base 2 and held thereon, thereby controlling the processing temperature of the object S1 through the controlled base 2 and realizing target processing.</p> |
