| 摘要 |
On a semiconductor base metal(31) on which foreign material doping area(32) is formed, an insulation layer(39) is formed. And on the insulation layer(33), an opening through which part of the surface of the doping area is exposed is formed. And a diffusive preventive film(35) is spread over total surface of the insulation area(33) inside a contact point(34) and exposed area on the semiconductor base metal(31). Carrying out annealing to the diffusion preventive film(35) and such oxide as TiO2, TiO, Ti203 and nuclear producing activated layer(36) are formed. |
