Chemical vapor deposition apparatus activated by a microwave plasma

摘要

PCT No. PCT/FR93/00926 Sec. 371 Date Mar. 23, 1995 Sec. 102(e) Date Mar. 23, 1995 PCT Filed Sep. 23, 1993 PCT Pub. No. WO94/06950 PCT Pub. Date Mar. 31, 1994Apparatus for plasma activated chemical vapor deposition, the apparatus comprising a microwave-excited plasma reactor with a reaction enclosure (10), a microwave generator (20), a waveguide (21) providing non-resonant coupling, and insertion means (40-54) for inserting at least one flow of a predetermined gaseous mixture into the enclosure; the insertion means comprise, in order: transformation means (40-43) for transforming the state of a precursor of a material to be deposited to bring it to the gaseous state, feed means (41, 42) for feeding a vector gas suitable for being charged with the gaseous precursor to constitute the above-mentioned predetermined gaseous mixture; and injection means (18) for injecting the predetermined gaseous mixture into the enclosure (10) and comprising an externally frustoconical nozzle provided with an injection orifice situated at one end and shaped as a function of the injection orifice and of the column configuration of the plasma formed, said nozzle having means for heating and thermally insulating the gaseous mixture.