发明名称 |
Method of forming green light emitting diode in silicon carbide |
摘要 |
A light emitting diode is disclosed that emits in the green portion of the visible spectrum, along with a method of producing the diode. The light emitting diode comprises a 6H silicon carbide substrate having a planar surface inclined more than one degree off axis toward one of the <11+E,ovs 2+EE 0> directions; an ohmic contact to the substrate; a first epitaxial layer of 6H silicon carbide on the inclined surface of the substrate and having a first conductivity type; a second epitaxial layer of 6H silicon carbide on the first layer and having the opposite conductivity type for forming a p-n junction between the first and second layers; and an ohmic contact to the second epitaxial layer. The diode produces a peak wavelength of between about 525 and 535 nanometers with a spectral half width of no more than about 90 nanometers.
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申请公布号 |
US5604135(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19940290020 |
申请日期 |
1994.08.12 |
申请人 |
CREE RESEARCH, INC. |
发明人 |
EDMOND, JOHN A.;SUVOROV, ALEXANDER V. |
分类号 |
H01L33/00;H01L33/16;H01L33/34;(IPC1-7):H01L21/24;H01L21/329 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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