| 摘要 |
An improved charge pump circuit uses standard low-voltage fabrication process for programming an anti-fuse memory cell from a high-voltage current source. A column-selection transistor which has a gate terminal connected to a control terminal. The column-select transistor is connected between a high voltage programming current source and one terminal of an anti-fuse link. The other terminal of the anti-fuse link is connected through a word-selection transistor to ground. The gate terminal of the word-selection transistor is connected to a word selection line. Two oppositely phased charge pumps provide a boosted voltage. A trapping-diode-connected transistor isolates the boosted voltage from the gate terminal of the column-selection transistor. A charge-kicker circuit further boosts the voltage on the gate of the column-selection transistor to turn on and pass current from the high voltage programming current source through the anti-fuse link.
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