发明名称 |
Chemical vapor deposition-produced silicon carbide having improved properties |
摘要 |
beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400 DEG -1500 DEG C. range, pressure 50 torr or less, H2/methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 mu m or less.
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申请公布号 |
US5604151(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19950439034 |
申请日期 |
1995.05.11 |
申请人 |
CVD, INCORPORATED |
发明人 |
GOELA, JITENDRA S.;BURNS, LEE E.;TAYLOR, RAYMOND L. |
分类号 |
C01B31/36;B28B1/30;C04B35/565;C04B35/571;C23C16/01;C23C16/32;C23C16/44;(IPC1-7):H01L21/20 |
主分类号 |
C01B31/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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