发明名称 Chemical vapor deposition-produced silicon carbide having improved properties
摘要 beta -silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400 DEG -1500 DEG C. range, pressure 50 torr or less, H2/methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 mu m or less.
申请公布号 US5604151(A) 申请公布日期 1997.02.18
申请号 US19950439034 申请日期 1995.05.11
申请人 CVD, INCORPORATED 发明人 GOELA, JITENDRA S.;BURNS, LEE E.;TAYLOR, RAYMOND L.
分类号 C01B31/36;B28B1/30;C04B35/565;C04B35/571;C23C16/01;C23C16/32;C23C16/44;(IPC1-7):H01L21/20 主分类号 C01B31/36
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