| 摘要 |
PCT No. PCT/JP94/02089 Sec. 371 Date Oct. 18, 1995 Sec. 102(e) Date Oct. 18, 1995 PCT Filed Dec. 14, 1994 PCT Pub. No. WO95/22643 PCT Pub. Date Aug. 24, 1995A single crystal growing method for producing a high-quality and large-diameter single crystal of a compound semiconductor with a good yield, is disclosed. A volatile element 2 is first put into a reservoir portion 1A of a quartz ampule 1. Further, a crucible 4 made of pBN, which contains a raw material 3A of a compound semiconductor, is placed in the quartz ampule 1, the vacuum sealing of which is then performed. While a vapor pressure controlling operation is performed, a furnace temperature distribution is controlled in such a manner that a vertical first temperature gradient alpha DEG C./cm) in the vicinity of an outside wall of the quartz ampule corresponding to a raw melt 3B is smaller than a vertical second temperature gradient ( beta DEG C./cm) in a range above the top end of the crucible 4 and simultaneously, the temperature is gradually lowered. Furthermore, alpha ranges from 51/D2 to 102/D2 DEG C./cm, and preferably ranges from 58/D2 to 83/D2 DEG C./cm (incidentally, the diameter of the single crystal is D cm). Additionally, beta ranges from 1.06x to 1.72x DEG C./cm, more preferably, ranges from 1.19X to 1.46X DEG C./cm ( incidentally, X is given by the following equation: X= 2ROOT +E,rad R rho / lambda nL),+EE where the cooling rate of the furnace temperature and the coefficients of thermal conductivity, the specific gravity, the latent heat of melting and the formula weight of the crystal are assumed to be R DEG C./hr, lambda kcal/cmxhrxK, rho g/cm3, L kcal/mol and n g/mol, respectively).
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