| 发明名称 |
Process of preparing tritiated porous silicon |
| 摘要 |
A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.
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| 申请公布号 |
US5604162(A) |
申请公布日期 |
1997.02.18 |
| 申请号 |
US19960671325 |
申请日期 |
1996.06.27 |
| 申请人 |
THE UNIVERSITY OF CHICAGO |
发明人 |
TAM, SHIU-WING |
| 分类号 |
H01L33/34;(IPC1-7):H01L21/302 |
主分类号 |
H01L33/34 |
| 代理机构 |
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