发明名称 |
Parasitic PNP transistor with crystal defect layer in the emitter region |
摘要 |
A transistor comprising a P-type high concentration impurity diffusion layer which can also serve as an emitter for a parasitic PNP transistor wherein a layer of crystal defect obtained by ion implantation of inert impurity atoms or a compound thereof is arranged in the P-type high concentration impurity diffusion layer thereby decreasing the current amplification rate of the parasitic transistor.
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申请公布号 |
US5604359(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19940185517 |
申请日期 |
1994.01.24 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NARUSE, KAZUSHI;YAMAMOTO, HIROAKI;NAKA, TOSHIO;TSUDA, KATSUKI |
分类号 |
H01L21/8222;H01L21/8238;(IPC1-7):H01L29/76;H01L27/108 |
主分类号 |
H01L21/8222 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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