发明名称 |
Method and apparatus for monolithic optoelectronic integratedcircuit using selective epitaxy |
摘要 |
A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of InxGa1-xAs selectively epitaxially grown between a substrate of Si and an absorption layer of InxGa1-xAs, the areas of said layers being less than 500 mu m2 and wherein a readout circuit on said substrate is coupled to said diode. |
申请公布号 |
AU6290896(A) |
申请公布日期 |
1997.02.18 |
申请号 |
AU19960062908 |
申请日期 |
1996.06.26 |
申请人 |
DISCOVERY SEMICONDUCTORS, INC. |
发明人 |
ABHAY M. JOSHI |
分类号 |
H01L27/14;H01L21/20;H01L21/205;H01L27/144;H01L31/10 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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