SEMICONDUCTOR DEVICE, LIGHT VALVE DEVICE AND PROJECTION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a light valve device having an extremely high pixel density by forming thin-film switching elements by using a substrate having a multilayered structure consisting of semiconductor single crystal thin-film layers. SOLUTION: This light valve device is composed of a driving substrate 1, a counter substrate 8 arranged to face this driving substrate 1 and an electro-optical material, for example, liquid crystal layer 9 arranged between the driving substrate 1 and the counter substrate 8. The driving substrate 1 has at least a two-layered structure consisting of a carrier layer 2 consisting of quartz glass and the single crystal silicon semiconductor layer 3 having a film thickness not exceeding 1000Å. The gate electrodes of the individual transistor(TR) elements 13 are connected to scanning lines 15 and are impressed with scanning signals by Y drivers to line-sequentially control the conduction and shut off of the individual TR elements 13. The display signals outputted from X-drivers 6 are impressed on the selected TRs 13 in a conducting state via signal lines 14. The impressed display signals are transmitted to corresponding pixel electrodes 12 to excite these pixel electrodes 12, which act on the liquid crystal layer 9, thereby adjusting transmittance to a value substantially approximate to 100%.