发明名称 |
Optimal gate control design and fabrication method for lateral field emission devices |
摘要 |
A lateral field emission device and method of fabricating the device which maximizes gate control of the cathode emitter electric field strength is disclosed. Gate control increases when the position of the gate edge is optimized with respect to the position of the emitter tip. Maximum control is achieved if the gate extends a distance beyond the emitter in the direction of the anode. Preferably, the displacement of the gate edge from the emitter tip is one half the cathode tip-anode distance for optimum control. The high gain device of the present invention provides improved transconductance.
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申请公布号 |
US5604399(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19950470320 |
申请日期 |
1995.06.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MANDELMAN, JACK A.;POTTER, MICHAEL D. |
分类号 |
H01J9/02;H01J1/304;H01J3/02;(IPC1-7):H01J1/62;H01J1/42;H01J1/46;H01J63/04 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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