发明名称 Charge pump circuit for boosting voltage
摘要 A charge pump circuit for boosting a supply voltage has two bipolar transistors instead of MOS transistors for obtaining a large current drivability without enlargement in the size of the circuit. One of the bipolar transistors replenishes charge to an internal charge-up node from a high potential source line and the other of the bipolar transistors supply output current to a load. The latter of the bipolar transistors may be replaced by a resistor and a plurality of the charge pump circuits may be cascaded for obtaining a higher boosting function of potential and a large current drivability.
申请公布号 US5604671(A) 申请公布日期 1997.02.18
申请号 US19950421890 申请日期 1995.04.14
申请人 NEC CORPORATION 发明人 OKAMURA, HITOSHI
分类号 H01L27/04;G11C5/14;H01L21/822;H02M3/07;(IPC1-7):H02M3/18 主分类号 H01L27/04
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