发明名称 |
Wire forming method for semiconductor device |
摘要 |
A wire forming method for a semiconductor device includes the steps of depositing an insulation material on a semiconductor substrate and patterning the insulation material to form a first insulation layer, forming a lower capping layer on the first insulation layer, etching the lower capping layer and the first insulation layer to form a first contact hole that exposes a first part of the semiconductor substrate, forming a wire layer over the capping layer and the first part of the semiconductor substrate, performing a chemical and mechanical polishing (CMP) process with respect to the wire layer and the lower capping layer to expose the first insulation layer, forming a second insulation layer over the wire layer and the first insulation layer, and etching the first and second insulation layers to form a second contact hole that exposes a second part of the semiconductor substrate. The wire forming method can prevent the lifting of the wire layer, the splitting of the lower insulation layer, and the formation of a protrusion n the second contact hole.
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申请公布号 |
US5604156(A) |
申请公布日期 |
1997.02.18 |
申请号 |
US19950560913 |
申请日期 |
1995.11.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHUNG, U-IN;KIM, JAE-DUK;HONG, CHANG-KI |
分类号 |
H01L21/28;H01L21/304;H01L21/306;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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