SOG FILM COATING METHOD ON SEMICONDUCTOR

摘要

The SOG film spreading method of a semiconductor element is provided with a wafer which can be driven left/right and upwardly/downwardly, while being rotated, to thereby prevent the formation of void due to the difference of end between metal wiring lines. The SOG film spreading method of the semiconductor element comprises the steps of forming a plurality of metal wiring lines on a substrate and positioning a wafer on a plate of an SOG spreader to spread an SOG solution by a predetermined thickness, driving the shaft of the plate in left and right by a predetermined angle of inclination and spreading continually the SOG solution by the centrifugal force and the left and right driving force of the shaft, driving the shaft of the plate upwardly and downwardly and spreading continually the SOG solution by the centrifugal force and the upward and downward driving force of the shaft, and filling a minute void between the metal wiring lines and completing an SOG film.