| 摘要 |
PROBLEM TO BE SOLVED: To obtain a film having a low dielectric constant by treating an insulating film formed on a substrate and composed of an organic silicon compound with fluorine plasma and, successively, with oxygen plasma. SOLUTION: Firstly, the xylene solution of polycarbosilane is applied to the surface of a silicon (Si) substrate 1 to a thickness of 5,000Åby using a spin coating method. After applying the solution, the solvent contained in the solution is removed by drying the solution in an inert gas atmosphere. Then the applied film is treated with plasma at 1.0Torr with a down-flow type plasma generator of 1.5kW in output by using nitrogen trifluoride (NF3 ) as a process gas. Successively, the film is treated with oxygen plasma with a barrel type plasma generator of 400W in output by using oxygen (O2 ) and argon (Ar) gases as process gases. Even when the film is subjected to these treatment, no crack is generated in the film. In addition, the dielectric constant of the insulating film thus formed measured by forming electrodes on the film is 2.5, which is lower than 4 of SiO2 .
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