发明名称 STRUCTURE OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To improve the yield of a semiconductor device by making the wafer thin to reduce the OH-resistance of an element in this device. SOLUTION: A semiconductor wafer 1 having pad electrodes 5 formed thereon is adhered to a strength-supporting plate 7 having a small thermal resistance and high insulation resistance by a first solder 11 through through-holes 10 and interconnection layers 8 and 9 to connect the wafer 1 to a lead frame electrode 12 through a metal layer 6 formed on the back side of a semiconductor chip 2, and the chip is also connected to another electrode 14 of the lead frame through interconnection layers 8 and 9 and plate 7 by a second and third solders 13 and 15.
申请公布号 JPH0945726(A) 申请公布日期 1997.02.14
申请号 JP19950198693 申请日期 1995.08.03
申请人 NISSAN MOTOR CO LTD 发明人 NAKAJIMA YASUSHI
分类号 H01L21/60;H01L23/13;H01L23/498;H01L23/50 主分类号 H01L21/60
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