| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide device structure, which materializes efficient electron emission, simply and stably by stacking different diamond layers on a substrate so as to form an electron emission part, and installing an anode electrode above this electron emission part. SOLUTION: An Si substrate 10 is installed on the substrate holder within the chamber of a microwave plasma CVD device, and a boron-doped diamond layer 12 and a nondoped diamond layer 13 are grown on the substrate 10 by the microwave plasma CVD. Subsequently, an Al layer is deposited on the nondoped diamond layer 13 in a deposition device, and is patterned to form a patterned Al layer 14. Furthermore, reactive etching is performed by a dry etching device so as to form an electron emission part 122 which has many projections, and it is made to function as a field emitter. An anode electrode 16 is installed in the position about 20μm apart from the tip of the projection of this electron emission layer 122, and a back electrode 18 is made at the rear of the Si substrate 10.</p> |
