METHOD FOR MANUFACTURING TRANSISTOR, METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, AND DISPLAY

摘要

PROBLEM TO BE SOLVED: To provide a method for easily manufacturing a thin-film transistor where source drain regions can be quickly formed at a low temperature. SOLUTION: A contact hole 6 in contact with a polycrystalline silicon film 2 is formed at an interlayer insulation film 5 and a gate insulation film 3. Then, aluminum film is formed on the entire surface of a device including the inside of the contact hole 6 and is subjected to patterning in a desired shape, thus forming a source/drain electrode 7. Then, the light of a lamp is applied to the reverse side of a transparent insulation substrate 1 by the RTA method. Then, the source/drain electrode 7 made of aluminum film absorbs the light of the lamp and is heated and the aluminum in the source/drain electrode 7 is subjected to solid-phase diffusion into the polycrystal silicon film 2, thus forming a p-type source/drain region 8 in the polycrystal silicon film 2 by aluminum which is a p-type impurity.