| 摘要 |
PROBLEM TO BE SOLVED: To provide an exposure mask for diagonal incident with which the formation of fine patterns is easy by increasing an image contrast and the improvement in a process yield and the reliability of element operation is possible by increasing the degree of margins in the process. SOLUTION: Auxiliary patterns 8, etc., for making diffraction angles equal or analogous with patterns over the entire part of the mask are formed in a space pattern 2 having the larger space inadequate for diagonal incident exposure according to the size of space patterns 3 having the max. depth of focus in the case where the spaces of various sizes are formed at the one exposure mask. The auxiliary patterns 8 are formed to be approximated to the size of the spaces in such a manner that the size of unimportant spaces has the max. depth of focus by iteratively arranging the projections or dots having the size to the extent of not forming images on a wafer, by which the patterns are so formed as to have the small focus process margin formed of the large spaces like the large focus process margin in the small space patterns. |
