| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical-structure transistor which is used for power amplification in a millimeter wave band and whose moistureproofness is excellent by a method wherein a bump electrode is formed in such a way that the width in the length direction of an element intrinsic operation part in parts other than a part faced with the part is made large as compared with the part faced with the part and that its outline is formed to be a specific plane shape. SOLUTION: A bump electrode 116 which is spread from a region directly above a single finger-shaped transistor element intrinsic operation part toward a direction perpendicular to the length direction of the part is formed in such a way that the width in the length direction of the element intrinsic operation part is large in parts other than a part faced with the element intrinsic operation part as compared with the part faced with the element intrinsic operation part and that its outline is formed to be a nearly H-shaped plane shape. The nearly H-shaped plane shape formed by the outlike of the bump electrode 116 is formed in such a way that an interior angle formed by a lateral side perpendicular to the length direction of the element intrinsic operation part and by oblique sides situated on both sides of the lateral side so as to be connected to it is a value at 180 deg. or higher and less than 270 deg., e.g. at 225 deg. or lower. |
