| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a formation method in which a high-quality oxide film is formed on the surface of a semiconductor substrate without a high-temperature heating operation and in which a gate oxide film is formed after the formation of a metal interconnection by a method wherein the oxide film which is contained on the surface of the semiconductor substrate is formed in a specific thickness so as to contain a film composed of a metal having an oxidation catalyst function and a metal thin film is formed of a metal which is in a specific thickness and which comprises an oxidation catalyst function. SOLUTION: An isolation region 2 and on active region 4 are formed on a silicon substrate 1, a natural oxide film 9 which exists on the surface of the active region 4 is removed, a wafer is rinsed, the wafer is immersed in hot nitric acid, and a chemical oxide film 5 is formed on the silicon substrate. Then, a platinum film 6 in a thickness of 1 to 30nm as a metal film having an oxidation catalyst function is vapor- deposited on the oxide thin film 5 by an electron-beam vapor deposition method. After that, a heating treatment is executed in humidified oxygen by an electric furnace, and a silicon oxide film 7 is grown in a thickness of 1 to 20nm. At this time, the oxide film 7 in the thickness of 1 to 20nm and the platinum film 6 in the thickness of 1 to 30nm are formed on the silicon substrate 1.</p> |
