| 摘要 |
PROBLEM TO BE SOLVED: To simplify the frequency adjustment process of a surface acoustic wave element and to reduce the number of entire manufacturing processes by forming an SiO2 protection film to each single surface acoustic wave element sliced individually from a piezoelectric substrate wafer. SOLUTION: An SiO2 protection film 3 is uniformly vapor-deposited to each surface acoustic wave element 2 formed on a piezoelectric wafer by using a photo-lithography technology and assembled via each process of dicing, dice bonding, and wire bonding through the use of the vapor-deposition technology of the electron beam radiation system employing a solid-state quartz block with a rotary mechanism for the vapor-deposition source. In the case of vapor- depositing the SiO2 protection film 3, an equivalent frequency to the film thickness of the SiO2 protection film 3 is utilized and managed in real time to adjust simultaneously the frequency of each surface acoustic wave element 2. |
