发明名称 THIN FILM TRANSISTOR ARRAY
摘要 PROBLEM TO BE SOLVED: To suppress an increase in a parasitic capacitance accompanied by providing a light shielding film and to prevent reflected light in a liquid crystal panel from being made incident to channel layer by providing a reflection preventing film formed from the same material as a light shielding film on a source drain electrode of a thin film transistor via an insulation film. SOLUTION: Light 140 emitted from the glass board 120 side reflects from metal films of the back of the glass board 100 on the opposite side of the incident light, a source electrode 104 a drain electrode 103, etc., and is made incident on a channel layer 102. To shield this incident light and suppress an increase in an off-current, a light shielding film 105 is formed. Since this light shielding film 105 is formed from a-Si (I), the incident light on the channel layer 102 cannot completely be absorbed only by the light shielding film 105 in the case of use in a projection type display device. For this reason, reflection preventing films 207, 208 formed from a-Si(I) are provided on the source electrode 104 and the drain electrode 103 causing light reflection in the panel as well as the light shielding film 105.
申请公布号 JPH0943632(A) 申请公布日期 1997.02.14
申请号 JP19950168561 申请日期 1995.07.04
申请人 NEC CORP 发明人 IHARA HIROSHI;NAKAJIMA KOJI;OI SUSUMU;KOIDE SHIN
分类号 G02B5/20;G02B1/11;G02F1/1335;G02F1/136;G02F1/1362;G02F1/1368;G09G3/36;H01L29/786 主分类号 G02B5/20
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