| 摘要 |
<p>PROBLEM TO BE SOLVED: To easily made an electron emission cold cathode which has structure fit for electron emission. SOLUTION: An insulating layer consisting of silicon nitride is stacked about 200nm thick on a substrate 31, and thereon a first conductive layer consisting of tantalum is stacked about 200nm thick, and further thereon a second conductive layer consisting of chromium is stacked about several nm to tens of nm thick. A resist layer is made on this second conductive layer, and exposure using a specified photomask is performed, and this is developed, and an opening is made in the resist layer, and a part of the surface of the second conductive layer is exposed. Performing etching by the etchant of tantalum higher in etching speed than chromium will made an emitter layer 3 for emission whose end is projecting outward from an emitter layer 33 for supply and whose end has a very small radius of curvature. The emitter layer 33 for supply effects the function of current supply to the emitter layer 34 for emission and heat radiation.</p> |
