| 发明名称 |
OHMIC ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND MANUFACTURE THEREOF |
| 摘要 |
PROBLEM TO BE SOLVED: To enable an ohmic electrode low and stable in contact resistance at a high-temperature heat treatment to be easily formed on both a P conductivity-type semiconductor layer and an N conductivity-type semiconductor layer at, the same time. SOLUTION: An SiN film is deposited on an Inx Ga1-x As (0<x<=1) layer 2 formed on a compound semiconductor substrate 1, and a Pt layer 3 and a Ti/Pt/Au metal layer 4 evaporated thereon are partially removed for the formation of an ohmic electrode. |
| 申请公布号 |
JPH0945890(A) |
申请公布日期 |
1997.02.14 |
| 申请号 |
JP19960125159 |
申请日期 |
1996.05.20 |
| 申请人 |
SHARP CORP |
发明人 |
YAKURA MOTOTSUGU;SATO HIROYA |
| 分类号 |
H01L21/28;H01L21/331;H01L29/43;H01L29/45;H01L29/73;H01L29/737;H01L29/80;(IPC1-7):H01L29/43 |
主分类号 |
H01L21/28 |
| 代理机构 |
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