FORMATION OF QUANTUM FINE LINE STRUCTURE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a quantum fine line in one crystal growth inside semiconductor crystal without using lithography technique. SOLUTION: After an Si buffer layer 11 is formed on an Si substrate 10 of surface orientation (110) by using a molecular beam epitaxial device, crystal growth is performed for Si1-x Gex mixed crystal at a substrate temperature of 800 deg.C and an Si1-x Gex quantum fine line along <112> orientation is formed. Thereby, an Si1-x Gex quantum fine line having a line width of at most a limit of lithography technique can be formed.