| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method consisting of thin films relating to particularly a lithography in production stages for semiconductor devices, etc. SOLUTION: Resist patterns 2a obtd. by forming a resist film 2 at a prescribed thickness on a substrate 1 to be processed and subjecting this film to exposure and development processing have taper angles at their ends. The other regions exclusive of the ends of the resist patterns 2a are exposed and are then heated, by which the regions exposed by UV rays are softened in order to eliminate such taper angles and to maintain the angles on the flanks of the resist patterns 2a perpendicular to the one main surface of the substrate 1 to be processed. As a result, the taper angles at the ends of the resist patterns 2a are made perpendicular to the one main surface of the substrate 1 to be processed. The substrate 1 to be processed is subjected to anisotropic etching by using such resist patterns 2a, by which the processing of the substrate to the designed patterns is made possible. |
