| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can reduce the memory size and also can dissolve electric unbalance. SOLUTION: The gate electrodes 3a and 3b of driver transistors Q3 and Q4 and load transistors Q5 and Q6 and the word line 9a doubling as the gate electrode of access transistors Q1 and Q2 are constituted of the separate layers of the first polysilicon layer and the second polysilicon layer (the second polyside layer), respectively. Moreover, at the cell current paths 11 and 12, contact parts other than the bit line contact and GND contact are not made. |
