| 摘要 |
PROBLEM TO BE SOLVED: To enhance remarkably the heat dissipation property of a metal heat dissiaption plate and to ensure properly the wire bondings between a semiconductor chip and inner leads by a method wherein the chip is bonded on a die pad and the metal heat dissipation plate is bonded to a limitated region in the center of the lower surface of the pad. SOLUTION: In the case of a dual-in-line semiconductor device 10, a semiconductor chip 13 bonded on a die pad 12 and a metal heat dissipation plate 14, which is bonded to the pad 12 in the center part of the lower surface of the pad 12 and has a prescribed plane shape, are incorporated in the interior of a resin package 11 formed of epoxy resin or the like. The plate 14 is arranged in such a way that the peripheral edge parts of the upper surface of the plate 14 are respectively superposed under the lower surfaces of the inner end parts of inner leads 15 in the vertical directions via microscopic gaps 18. The plate 14 and the pad 12 are bonded to each other at a limited region 19 in the center part of the lower surface of the pad 12 and the center part of the upper surface of the plate 14.
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