| 摘要 |
PROBLEM TO BE SOLVED: To form a BSF layer in a fine pattern by depositing silicon nitride having multiple through holes on the rear side of a silicon wafer and providing rear electrodes at the through holes. SOLUTION: An antireflection film 2 is deposited on one major surface of a silicon wafer 1 having the other major surface deposited with silicon nitride 3. The silicon nitride 3 is provided with through holes 3a and the antireflection film 2 is removed to form a pattern reverse to that of a surface electrode 5. Subsequently, surface electrode 5 and rear surface electrode 6 are formed, respectively, in a part on one major surface of silicon wafer 1 from where the antireflection film 2 is removed and in a part on the other major surface of silicon wafer 1 from where the silicon nitride 3 is removed. With such a structure, the silicon nitride can be used as a mask when aluminum is diffused, a heavily doped P+ region can be formed in fine pattern and passivation effect can be provided on the rear side of wafer by the silicon nitride. |
