| 摘要 |
PROBLEM TO BE SOLVED: To provide a charge storage capacitor of a semiconductor element and a manufacturing method thereof, wherein the electrode of the storage capacitor can be increased in surface area. SOLUTION: The charge storage capacitor of a semiconductor element is composed of an insulating film 25 which is formed on a ground with a level difference and high in fluidity at high temperatures, a lower electrode 27 which is connected to a cell contact 26 and formed on the surface of the insulating film 25 and whose surface is undulated like folds, a capacitor insulating film 28, and an upper electrode 29 formed thereon. |
