SEMICONDUCTOR OPTICAL MODULATOR AND SEMICONDUCTOR LASER DEVICE INTEGRATED WITH THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor optical modulator which prevents leak current at the time of reverse biasing and is formed by embedding its mesa flank with an Fe-doped InP embedment layer and a semiconductor laser device integrated therein. SOLUTION: The semiconductor optical modulator formed by embedding the mesa flank having a light absorption layer 22 with the Fedoped InP high resistant embedment layer 24 is provided with an (n) type InP embedment layer 25 which is formed on the Fe-doped InP high resistant embedment layer 24 and has an impurity concn. as high as >=1×10<18> cm<-3> , a p type InP embedment layer 26 which is formed on the (n) type InP embedment layer 25 and has an impurity concn. as low as <=1×10<17> cm<-3> , the light absorption layer 22 and a(p)type InP clad layer 23 which is formed on the (p) type InP embedment layer 26 and has an impurity concn. as high as >=4×10<17> cm<-3> .