发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a high sensitive positive photoresist composition excellent in exposure latitude and coefficient of line breadth deviation by the change of exposure. SOLUTION: The positive photoresist composition contains an alkali soluble resin, a quinone azide compound and a compound expressed by a general formula. In the formula, each of R1 -R15 is the same or different and is hydrogen atom, halogen atom, an alkyl group or the like, each of R17 and R18 is hydrogen atom, an alkyl group or an aryl group, Z is -NHSO2 - or -SO2 NH-, Ar is a univalent aromatic group capable of having a substituent group and at least one or more hydroxyl groups are contained in both or one of X and Ar.
申请公布号 JPH0943840(A) 申请公布日期 1997.02.14
申请号 JP19950194880 申请日期 1995.07.31
申请人 FUJI PHOTO FILM CO LTD 发明人 NISHIYAMA FUMIYUKI;SATO KENICHIRO;KODAMA KUNIHIKO
分类号 G03F7/004;G03F7/022;G03F7/039;H01L21/027;(IPC1-7):G03F7/022 主分类号 G03F7/004
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