SEMICONDUCTOR ELEMENT, ITS WIRE FORMING METHOD, AND GATE ELECTRODE FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To improve yield, reduce cost, and improve performance and reliability by forming the wire of a semiconductor element or a gate electrode layer with silicon and germanium alloy and oxidizing a part or all of the surface. SOLUTION: After successively forming a field oxide film 2, a channel stopper 3, and a gate oxide film 4 on a silicon substrate 1, polycrystal silicon/germanium is selectively formed as a gate electrode 5 and a grounding wire 6. After it is doped with impurity ions and a source/drain region 8 is formed, the gate electrode 5 and the grounding wire 6 are thermally oxidized at 700 deg.C or lower temperature for insulation separation. Finally, after a through hole is formed, a source/drain electrode 9 is formed.